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Visit Us at IMS 2008
June 15 - 20, 2008
Visit Booth # 932
1000 East Industrial Park Drive
Manchester, NH 03109
info@ionbeammilling.com
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The benefit of ion beam milling is a circuit produced
by dry etching that precisely duplicates the photo-resist image with
zero under-etch (under-cut). The resultant line and space configurations
can be precisely "modeled" by
existing software allowing an accurate prediction of performance prior
to breadboard evaluation.
Thin Films |
Thin Film Systems |
Substrates |
Conductor:
Gold, Copper
Aluminum
(thickness 0.1 to 20 microns with 2.5 microns +/- 15%)
Barrier Layers:
Platinum, Nickel, TiW, Titanium
Resistor Layers:
Nichrome:
(100-250 Ω/sq at TCR 5-50 ppm)
Adhesion Layers:
TiW, Chrome, Titanium, Tantalum, Ni Chrome
Passivation Layers:
Silicon Dioxide, Polymide
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TiW/Au
Ti/Pt/ Au
Ti/Ni/ Au
TiW /Pt/ Au
TiW /Ni/ Au
Au/Sn
TaN/Au
TaN/Ni/ Au
TaN/TiW/Au
Cr/ AU
Cr/Cu/ Au
Cr/Cu/Ni/ Au
NiCr/Au
NiCr/TiW/Au
Etc., etc...
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ALUMINA POLISHED/AS FIRED
ALUMINUM NITRIDE POLISHED OR LAPPED
QUARTZ
FERRITE
SAPPHIRE
Go As
HIGH DIELECTRICS
BERYLLIA
BARIUM TITANATE
OTHER EXOTIC MATERIALS
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Resistor Tolerances: TO +/-0.1
ABSOLUTE; RATIOS +/-0.001% VALUE DEPENDENT
Conductor Tolerances: TO +/-0.001" ON
LINE WIDTH/SPACE UP TO 65K ANGSTROMS
Plated through Holes: TO 0.008" DIAMETER
OR LARGER +/-0.002"
Wraparounds: YES, WITH 0.001"-0.002" RECESS;
WRAPAROUND ATTENUATOR PADS ALSO
Design/Tooling: YOUR CAD
FILES IN AUTO CAD, GERBER, ETC. |
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 Download
the "From Print to Product" Literature
Ion beam milling is a high resolution sputtering
process employing argon gas. The anistropic structure generation (vertical
walls) results in a patterning precision better than 8 microinches. The
process is ideally suited to hybrid IC fabrication where wet chemical
etching process tolerances are limited to ~ one half the metal thickness. Conductor
features of 0.5 mil lines and gaps in 10 micron gold have been routinely
processed with 95% post etch yields.
All milling is performed in a vacuum
chamber with the metallized substrates attached to a cold plate.
In general, photoresists
must stay below 100°C
to eliminate any pattern degradation, a low thermal resistance path
from milled surface to cold plate is mandatory.
Up to sixteen 2" x 2" (Al2O3)
coated substrates can be fixtured on the rotating cold plate. The
rotating cold plate assures uniform etching of the individual substrates
while maintaining surface temperatures below 100°C.
The photoresist
mask defines the pattern that is being etched.
Since all material etches,
the ratio of metal to resist etch rate must be sufficiently high, to
preserve the pattern, over the duration of the etching cycle. Etch
rate (A°/min) is limited only by the power
density of the beam impinging on the part surface. Typical values
of etch rates are:
| Material |
Etch Rate (A°/min) |
| Gold (Au) |
1000 |
| Copper (Cu) |
700 |
| Az-1350 (resist) |
200 |
| Nichrome (NiCr) |
170 |
| Alumina (Al2O3) |
90 |
The challenge that ion beam milling has addressed is that of thicker
metalizations encountered in the thin and thick film hybrid industry
where metal thickness up to 10 microns (400uin.) are required for low
DCR or low frequency skin depth concerns.
| Production Method: |
Dry Milling (4 to 5 um metalization) |
| Post-Process Yields: |
Exceeding 90 percent |
| Circuit-to-Circuit Repeatability: |
100 percent |
| Process Time: |
Reduced 10:1 over wet etching |
| Milling Performance: |
Anisotropic with no undercutting or pattern
change |
| Available Feature Size: |
0.2 um (0.00001 in.) |
| Other Advantages: |
Reduced inspection, rework, and final
test time due to excellent repeatability. |
Ion Beam Milling is your leading source
for laser diode submounts,
attenuators, spiral
inductors, custom thin
film circuits, ion etching and photolithography.
If you would like a copy of our ISO Quality Manual please visit the Information
Request page.
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