Have Questions?

Receive a quick response!

info@ionbeammilling.com

Home > Guidelines & Resources > Thin Film Metallization Specifications

Thin Film Metallization Specifications

Since 1982, Ion Beam Milling has delivered thousands of products to our customers.  During the past two and a half decades, we have seen many different metallization schemes, but certain ones stand out.  The following charts list the most common metallization schemes requested by our customers.  While this list covers the schemes we see most often, we can create a custom scheme to meet your specific requirements.  Please contact us for details.

The common schemes listed below all accept the following standard die attach methods:

  • Epoxies
  • Au/Ge eutectic
  • Au/Si eutectic
  • Au/Sn solder

 

Ti/Pt/Au

Application Use

Au/Ge and Au/Si eutectic compatibility.  Film withstands 450C process temperatures

Advantages

Very robust film on standard MIC dielectrics

Solderability

Both Au/Sn and Pb/Sn is recommended due to presence of Pt barrier layer

Front Side Metallization

Sputtered Ti 800A 1000A

Sputtered Pt 1000 2000A

Sputtered Au 3000 5000A, Plate 1-6 microns

Back Side Metallization

Same as Front Side

TiW/Au

Application Use

Robust film for MIC requirements

Advantages

Superior (Ti) adhesion to highly polished dielectrics

Solderability

Au/Sn is ideal, Pb/Sn not recommended due to lack of barrier layer

Front Side Metallization

Sputtered TiW 800A 1000A

Sputtered Au 3000 5000A, Plate 1.5-6 microns

Back Side Metallization

Same as Front Side

TiW/Ni/Au

Application Use

General Microwave circuit applications without resistors.  Upper temperature limit of 300C

Advantages

Higher frequency performance without (TaN) resistor adhesion layer

Solderability

Both Au/Sn and Pb/Sn is recommended due to presence of Ni barrier layer

Front Side Metallization

Sputtered TiW 800A 1000A

Sputtered Ni 1000-2000A

Sputtered Au 3000 5000A, Plate 1-6 microns

Back Side Metallization

Same as Front Side

TiW/Cu/Ni/Au

Application Use

Low loss conductor (Cu) for higher current and power requirements.  Ideal for low DCR spiral inductors

Advantages

Solderable and Wire-bondable to 300C

Solderability

Both Au/Sn and Pb/Sn is recommended due to presence of Ni barrier layer

Front Side Metallization

Sputtered TiW 800A 1000A

Sputtered or Plated Cu 1-6 microns

Plated Ni 1 3 microns

Plated Au 1.5-6 microns

Back Side Metallization

Same as Front Side / Alternative Formulation available per Customer requirement

TiW/AU/Cu/Ni/Au

Application Use

High Power/low loss requirements of (Cu) facilitates inductor and transmission line fabrication

Advantages

Primary conductor (Cu) has lower resistivity than Au.  Lower cost alternative to thick Au conductors.

Solderability

Both Au/Sn and Pb/Sn is recommended due to presence of Ni barrier layer

Front Side Metallization

Sputtered TiW 800A 1000A

Sputtered Au 3000-5000A

Plated Cu 1-6 microns

Plated Ni 1 3 microns

Plated Au 1.5-6 microns

Back Side Metallization

Same as Front Side / Alternative Formulation available per Customer requirement

Ti/ Au

Application Use

Lower cost alternative for Au/Sn eutectic preform requirements.

Advantages

Ti has excellent adhesion to polished quartz

Solderability

Au/Sn is ideal, Pb/Sn not recommended due to lack of barrier layer

Front Side Metallization

Sputtered Ti 800A 1000A

Sputtered Au 3000 5000A, Plate 1-6 microns

Back Side Metallization

Same as Front Side

Tan/TiW/Au

Application Use

Standard resistor/resistor network requirements

Advantages

Au/Ge and Au/Si attachment compatible

Solderability

Au/Sn is ideal, Pb/Sn not recommended due to lack of barrier layer

Front Side Metallization

Sputtered Tan (25 200 Ohms/Square)

Sputtered TiW 800A 1000A

Sputtered Au 3000 5000A, Plate 1-6 microns

Back Side Metallization

Sputtered TiW 800A 1000A

Sputtered Au 3000 5000A, Plate 1-6 microns

Tan/Ti/Ni/Au

Application Use

RF/Microwave circuits, attenuators, and resistor/resistor network requirements.

Wire-bondable (Au) and solderable

Advantages

TaN is passivated and is stable in a high humidity environment

Solderability

Both Au/Sn and Pb/Sn is recommended due to presence of Ni barrier layer

Front Side Metallization

Sputtered Tan (25 200 Ohms/Square)

Sputtered Ti 800A 1000A

Sputtered Ni 1000-2000A

Sputtered Au 3000 5000A, Plate 1-6 microns

Back Side Metallization

Sputtered Ti 800A 1000A

Sputtered Ni 1000-2000A

Sputtered Au 3000 5000A, Plate 1-6 microns